Transistor – Field Effect Transistor and Bipolar Junction Transistor (Coursera)

Transistor – Field Effect Transistor and Bipolar Junction Transistor is an online MOOC Course, Offered by the University of Colorado Boulder via Coursera. This course is 3 of 3 in the Semiconductor Devices Specialization.

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Transistor – Field Effect Transistor and Bipolar Junction Transistor Coursera Online Course Overview

Transistor – Field Effect Transistor and Bipolar Junction Transistor Coursera course presents an in-depth discussion and analysis of metal-oxide-semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, modes of operation, switching and current amplifying behaviours.

At the end of this course learners will be able to:

  • Understand and analyze metal-oxide-semiconductor (MOS) device
  • Understand and analyze MOS field effect transistor (MOSFET)
  • Understand and analyze bipolar junction transistor (BJT)

Course Syllabus

WEEK 1 – Metal-Oxide-Semiconductor (MOS) Device

In this module on MOS devices, we will cover the following topics: MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on the threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS.

WEEK 2 – MOS Field Effect Transistor (MOSFET)

In this module on MOSFETs (metal-oxide-semiconductor field-effect transistors), we cover the following topics: History of the development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punch through, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with the channel length, and Scaling of speed with channel length.

WEEK 3 – Bipolar Junction Transistor (BJT)

In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe injection, Non-uniform doping in base, Current gain, Switching with BJT, Single heterojunction bipolar transistor, Double heterojunction bipolar transistor, Non-uniform material, Early effect, Emitter bias dependence, High-level injection, Base, emitter and collector transit times, and RC time constant.

Course Instructor

  • Wounjhang Park

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Course Efforts

1-4 Hours/Week

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Course Length

3 Weeks

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English, French, Portuguese, Spanish

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